10th International Workshop on Compact Modeling
January 22 (Tue), 2013
Pacifico Yokohama, Room 419
Yokohama, Japan
Time
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#
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Title
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Authors
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Affiliation
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9:00-9:10
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Opening:
H. J. Mattausch (Workshop Chair)
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Power Devices Chair: D. Navarro
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9:10-9:30
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1
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HiSIM_HV
Temperature Modeling for Multi-Geometry LDMOS: Comparison of the Temperature
Flag Options
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Y.
Iino
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Silvaco Japan
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9:30-9:50
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2
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Analysis and Further Improvements of the Drain-Resistance Modeling in HiSIM_HV
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T.
Umeda et al.
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Hiroshima
University
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9:50-10:10
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3
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Floating-Base
Effect Modeling for IGBT Structure using Potential Modification
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T.
Yamamoto
et al.
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Denso
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10:10-10:30
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-
Break -
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Novel FET Structures Chair: T. Nakagawa
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10:30-10:50
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4
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Study
on Dynamic Threshold Nanowire Tunnel FET
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A.
Zhang et al.
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Peking
University
Shenzhen
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10:50-11:10
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5
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A DC Model of TFETs for SPICE Simulations
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L. Zhang and M. Chan
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HK UST
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11:10-11:30
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6
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A
Surface Potential Based Compact Model of Organic Thin-Film Transistor for
Circuit Simulation
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T.K. Maiti et al.
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Hiroshima University
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11:30-11:40
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- Break -
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Optical and Wireless Chair: J. He
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11:40-12:00
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7
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An
Embedded Modulation of Silicon Germanium FIN-LED - A simulation study
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J.
Kwon et al.
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Seoul
National
University
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12:00-12:20
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8
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Predicting
Key Parameters of Inductive Power Links
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S.
Raju et al.
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HK UST
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12:20-14:00
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-
Lunch Break -
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Aging and Degradation Chair: M.
Miura-Mattausch
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14:00-14:40
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9
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Invited
Keynote: Interaction of Bloch Carrier and Bound State in the Reliability
Modeling
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Y.J.
Park and
S.
Choi
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Seoul
National
University
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14:40-15:00
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10
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Development
of Unified Predictive NBTI Model and its Application for Circuit Aging
Simulation
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C. Ma
et al.
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Hiroshima
University, STARC
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15:00-15:20
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11
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Effects
of Nonlocal Concentration of Carriers in the Oxide for NBTI Simulation
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S. Rhee et al.
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Seoul
National
University
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15:20-15:40
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- Break -
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Fabrication Variation Chair: Y. J. Park
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15:40-16:00
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12
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Parameter
Extraction for Statistical Variation of HV-MOSFETs
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Y.
Ueda et al.
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Ricoh, STARC
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16:00-16:20
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13
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Analysis
of Gate-Length Dependence of MOSFET Random Variation by Using
HiSIM-RP
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S.
Kumashiro
et al.
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Renesas
Electronics
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16:20-16:40
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14
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Random
Dopant Fluctuation Effects on Double Gate Tunneling FET Performance
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Y. Zhu
et al.
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Peking
University
Shenzhen
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16:40-16:50
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Closing:
H.J. Mattausch (Workshop Chair)
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