Papers in March 2012

SP-HV: A Scalable Surface-Potential-Based Compact Model for LDMOS Transistors

Yao, W.  Gildenblat, G.  McAndrew, C. C.  Cassagnes, A. 
Abstract | Full Text: PDF (435KB) 

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Vasicek, M.  Cervenka, J.  Esseni, D.  Palestri, P.  Grasser, T. 

Abstract | Full Text: PDF (790KB) 

Physics-Based Modeling of GaN HEMTs

Vitanov, S.  Palankovski, V.  Maroldt, S.  Quay, R.  Murad, S.  Rodle, T.  Selberherr, S.

Abstract | Full Text: PDF (1220KB) 

A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias

Jan, S.-R.  Chou, T.-P.  Yeh, C.-Y.  Liu, C. W.  Goldstein, R. V.  Gorodtsov, V. A.  Shushpannikov, P. S. 
Abstract | Full Text: PDF (849KB) 

 

 

A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors

Sayed, S.  Hossain, M. I.  Khan, M. Z. R. 
Abstract | Full Text: PDF (138KB) 

 

 

Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

Markov, S.  Cheng, B.  Asenov, A. 
Abstract | Full Text: PDF (403KB) 

 

 

The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

Kang, M.  Lee, K.  Chae, D. H.  Park, B.-G.  Shin, H. 
Abstract | Full Text: PDF (384KB) 

 

 

Measurement of Source Resistance in Top-Contact Organic Thin-Film Transistors

Singh, V. K.  Agrawal, A. K.  Mazhari, B. 
Abstract | Full Text: PDF (249KB) 

 

 

 

Demystifying Surrogate Modeling for Circuits and Systems

Yelten, M.B.  Zhu, T.  Koziel, S.  Franzon, P.D.  Steer, M.B. 
Abstract | Full Text: PDF (1492KB) 

 

 

 

Teaching Memory Circuit Elements via Experiment-Based Learning

Pershin, Y.V.  Ventra, M.D. 
Abstract | Full Text: PDF (1655KB) 

 

 

 

Agilent Technologies Completes Acquisition of Accelicon Technologies' Solutions for Semiconductor Device Modeling

SANTA CLARA, Calif., Feb. 21, 2012
Agilent Technologies Inc. (NYSE: A) today announced that Accelicon Technologies' software solutions and technology for device-level modeling and validation in the electronics industry are now part of Agilent. The two companies had announced an acquisition agreement on Dec. 1, 2011. Financial details were not disclosed.
The acquisition, led by Agilent's EEsof EDA organization, further enhances Agilent's leadership in semiconductor device modeling. Accurate, verified device models are critical to reduce R&D design cycles as higher frequencies, smaller technology nodes, new materials and device layouts call for more accurate process design kits. As part of the Software and Modular Solutions Division, Agilent EEsof continues to integrate its industry-leading design simulation with real measurements to improve design efficiency for engineers who develop communications systems. These improved tools and processes solve the increasing complexities they face when designing communications systems for aerospace/defense and commercial wireless applications.
Agilent's newly acquired solutions from Accelicon include MBP for device-level extraction and model generation, MQA for device-level model validation and AMA for advanced model analysis, including layout effects.
Accelicon was founded in 2002 by noted industry veteran Dr. Xisheng Zhang, who has now joined Agilent along with former Accelicon CEO Tim K. Smith. The majority of the former Accelicon employees are located in Beijing; they are also now part of Agilent.

8th International Conference on Organic Electronics

Tarragona, Spain June 25‐27, 2012 

Organic electronics is a rapidly growing technology that is anticipated to compare with conventional microelectronics in the near future to make transistor circuits, displays and solar cells. Other application like sensors are expected. The International Conference on Organic Electronics was held from 2005 to 2008 in Eindhoven, The Netherlands. In 2009, ICOE moved to Liverpool, United Kingdom, in 2010 to Paris, in 2011 in Rome, while the 2012 edition will be held at the campus of University Rovira i Virgili (URV) in Tarragona, Spain. The conference intends to cover all aspects of organic electronics, including materials and chemistry, transistors, OLEDs, photovoltaic cells, circuits and circuit design, manufacturing and inclusion in systems. Technical areas include, but are not limited to: 

• Materials and chemistry 
• Transistors 
• OLEDs Photovoltaic cells 
• Circuits and circuit design 
• Manufacturing and inclusion in systems 
• Modelling 

The conference will be held in coordination with two other events, partially related to the topic: the 10th Graduate Student Meeting on Electronic Engineering (June 21-22) and the 2nd International Training Course on Compact Modelling (TCCM 2012) (June 28-29).

[read more...]

[mos-ak] Final Program MOS-AK/GSA India Workshop on March 16-18, 2012

Final Program MOS-AK/GSA India Workshop on March 16-18, 2012
============================================================
http://www.mos-ak.org/india/

* Venue:
========
Jaypee Institute of Information Technology (JIIT),
A-10, Sector-62, Noida (U.P.), India
Phone: 0120-2400973-976, 2400987
http://www.mos-ak.org/india/#Venue

* Workshop Registration Form
============================
http://inae.org/contents/Registration%20Form.pdf

* Agenda:
=========
http://www.mos-ak.org/india/
with CMOS technology and SPICE Models Tutorial by Dr. N.D. Arora,
Silterra, Malaysia

Organizing MOS-AK/GSA Committee:
================================
A.B. Bhattacharyya, Emeritus Professor, JIIT, India (Chair)
S.C. Saxena, Vice Chancellor, JIIT, Noida (Host)
Ehrenfried Seebacher, austriamicrosystems AG, Austria (Co-Chair)
Wladek Grabinski, MOS-AK (European Arrangements Co-Chair)
M.J. Zarabi, Chairman, Vice-President, Microelectronics Forum INAE New
Delhi, India
Varambally Rajamohan, ST Microelectronics, India
Shantanu Mahapatra, IISc, India
Rajamohan Varambally, ST Microelectronics, Noida, India
Kulbhushan Misri, Freescale, Noida, India
M. Jagdesh Kumar, IIT Delhi, India
Manoj Saxena, Delhi University, South Campus, New Delhi, India

Extended MOS-AK/GSA Committee:
==============================
http://www.mos-ak.org/committee.html

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2nd Training Course on Compact Modeling

Building on the success of its first edition in 2012, the 2nd Training Course on Compact Modeling (TCCM) will be held in Tarragona (Catalonia, Spain) on June 28-29 2012. It will be organized by will be organized by the NEPHOS Group, of the Department of Electronic, Electrical and Automatic Control Engineering at the Universitat Rovira i Virgili (Tarragona).. The General Chairman is Prof. Benjamin Iñiguez.

The Training Course on Compact Modeling will consist of 12 of lectures addressing relevant topics in the compact modeling of advanced electron devices. These lectures will be conducted by top experts in the field. Most of the lectures will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.

The Training Course on Compact Modeling is an event sponsored by the FP7 “COMON” (COmpact MOdelling Network) IAPP Project (which is coordinated by the Universitat Rovira i Virgili) in collaboration with the IEEE EDS Compact Modeling Technical Committee.

The final programme will be published very soon. Registration will be cheap. It will include lunches, coffe breaks and a Gala Dinner on June 28, in a nice restaurant with TV screens to watch the Semifinals match of the Soccer European Cup ...

Besides, on June 25-27 the same group at URV will organize 8th International Conference on Organic Electronics (ICOE 2012) also in Tarragona. Participants to this Training Course will have a reduced fee for ICOE 2012.


Tarragona is located in the south of Catalonia, in the northeast corner of the Iberian Peninsula. Tarraco (its Roman name) was one of the most important cities in the Roman Empire.
On 30 November 2000, the UNESCO committee officially declared the Roman archaeological complex of Tàrraco a World Heritage Site.

Tarragona can be easily reached from Barcelona Airport by bus and train. It is about 100 Km South from Barcelona. Besides, Reus Airport (less than 15 Km from Tarragona) receives flights from many European cities in the summer.

Tarragona can be easily reached from Barcelona Airport by bus and train. It is about 100 Km South from Barcelona. Besides, Reus Airport (less than 15 Km from Tarragona) receives flights from many European cities in the summer.

Speaking about Tarraco's climate, the famous Roman poet Virgil wrote: "The climate blends and confuses the seasons singularly, so that all the year seems an eternal spring." Thanks to its temperate climate, with an average yearly temperature of 23ºC, its clean beaches with fine and gloden sand, and its singular artistic and architectural heritage, Tarragona is one of the most important tourism hubs in Europe.

I strongly encourage all people interested in compact modeling to attend the 2nd Training Course on Compact Modeling!

8th International Conference on Organic Electronics

The 8th International Conference on Organic Electronics (ICOE 2012) will be held in Tarragona (Catalonia, Spain) on June 25-27 2012. ICOE'12 will be organized by the NEPHOS Group, of the Department of Electronic, Electrical and Automatic Control Engineering at the Universitat Rovira i Virgili (Tarragona). Prof. Benjamin Iñiguez will be the General Chairman of ICOE 2012.

The conference covers all aspects of organic electronics, including materials and chemistry, transistors (OTFTs), OLEDs, photovoltaic cells, circuits and circuit design, manufacturing and inclusion in systems.

"Modeling" is one of the topics, and of course, it includes Compact Modeling.

DEADLINE FOR A 2-PAGE ABSTRACT SUBMISSION: MARCH 1 2012.

The venue is the "Aula Magna" in one of the campuses of University Rovira i Virgili (URV) in Tarragona.


Tarragona is located in the south of Catalonia, in the northeast corner of the Iberian Peninsula. Tarraco (its Roman name) was one of the most important cities in the Roman Empire.
On 30 November 2000, the UNESCO committee officially declared the Roman archaeological complex of Tàrraco a World Heritage Site.

Tarragona can be easily reached from Barcelona Airport by bus and train. It is about 100 Km South from Barcelona. Besides, Reus Airport (less than 15 Km from Tarragona) receives flights from many European cities in the summer.

Speaking about Tarraco's climate, the famous Roman poet Virgil wrote: "The climate blends and confuses the seasons singularly, so that all the year seems an eternal spring." Thanks to its temperate climate, with an average yearly temperature of 23ºC, its clean beaches with fine and gloden sand, and its singular artistic and architectural heritage, Tarragona is one of the most important tourism hubs in Europe.

A Gala Dinner will take place in the evening of June 26. I recommend atttendees to go; there will be no match of the Soccer European Cup on that date, so you will have something to enjoy...

Besides, on June 28-29 (just after ICOE 2012), the 2nd Training Course on Compact Modeling will be held also in Tarragona, organized by the same group at the Universitat Rovira i Virgili. ICOE participants will have a reduced fee for that Training Course, which will target many topics related to compact device modeling.

I encourage researchers working on Organic Electronics, including modeling to submit abstracts to ICOE'12.

SMACD-2012

The International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) will be held in Seville (Spain) in September 2012 as a dedicated forum devoted to Design Methods and Tools for Analog, Mixed-signal, RF (AMS/RF) and multi-domain (MEMs, nanoelectronic, optoelectronic, biological, etc.) integrated circuits and systems.

SMACD 2012 topics of interest include, but are not limited, to:

• Performance modeling

• Power and thermal modeling

• Reliability modeling

• Variability modeling

• Compact device and circuit modeling

• Multi-domain modeling (optoelectronics, MEMs, biological, biochemical, etc.)

• Modeling languages and applications

• Linear and non-linear model reduction

• Circuit and system theory and applications

• Behavioral modeling and simulation

• Numerical and symbolic simulation methods

• Distributed and parallel circuit simulation

• Analysis and simulation techniques for emerging nanoscale devices

• Analysis of reliability effects: aging, electro-migration, BTI, etc.

• Simulation and estimation methods of variability and yield

• Fault modeling and simulation

• System-level specification and simulation

• Novel system-level design flows

• Innovative design methodologies enabled by behavioral, performance, and/or symbolic modeling techniques

• Synthesis methods in multi-domain (MEMs, electro-optical, etc.) systems

• Physical synthesis

• High-frequency modeling, simulation and design

• Low-power design techniques

• Parasitic-aware synthesis

• Variability-aware and reliability-aware design methodologies

• Test and design-for-test methods

• Language-based synthesis techniques

• Optimization methods applied to circuit and system design: high-level synthesis, structural synthesis, sizing, etc.

If you want to know more about the SMACD Conference series, click here.

IM3OLED project to develop multi-scale OLED modelling tool

The EU-funded IM3OLED (Integrated Multidisciplinary & Multiscale Modeling for Organic Light-Emitting Diodes) project has officially been launched.

IM3OLED aims to help the OLED industry speed up development by creating new modelling software that allows a more systematic R&D process. This software toolset will predictively model OLEDs in 3D and at all length scales – from molecular to large-area devices. It will include molecular calculations, electrical and optical simulation, 1D-3D light extraction and scaling / integration effects.
An important aspect of software will be the inclusion of dynamic feedback loops, enabling developers to accurately predict how changes in one area of OLED development affect other areas. This will allow multiple OLED properties to be optimised simultaneously.
The overall device efficiency of an OLED depends on many factors:

• the properties of the light emitting molecules
• deposition on to the substrate
• integration into a device
• extracting the light from the active layer and the device
• heat management and more

It is further complicated as many of these factors are interlinked – e.g. how the device heats up in operation may affect the molecules’ ability to generate light and the way light travels through the device.
This makes it extremely difficult to predict how innovations in one area will affect performance in others, leading to a trial-and-error approach in R&D.

Stephan Harkema, project coordinator, said, “IM3OLED will develop, evaluate and validate a predictive multi-scale and multi-disciplinary modeling tool. Making such a tool available will accelerate progress of OLEDs for lighting applications and allow the European OLED industry to strengthen its leading position in this environmentally important, global market.”
IM3OLED brings together industrial and academic partners from across Europe and the Russian Federation and is coordinated by TNO/Holst Centre and by National Research Nuclear University MEPhI.
Industrial partners include OLED manufacturer Philips Electronics and specialist in simulation software SMEs Fluxim of Switzerland and Kintech of Russia.
Academic partners include leading computational physics and atomic / molecular modelling groups from the Zurich University of Applied Science (ZHAW) and Russian Academy of Sciences’ Photochemistry Center (PCC RAS).
Funded through the European Union’s Seventh Framework Programme (FP7NMP Grant no 295368), the EU portion of the IM3OLED project will run for 30 months until late 2013.
www.im3oled.eu www.holstcentre.com www.mephi.ru

[mos-ak] MOS-AK/GSA calendar 2012

The MOS-AK/GSA Compact Modeling Committee
have scheduled following four workshops in 2012
<http://www.gsaglobal.org/events/calendar.asp>.
Please mark your calendars and make plans to join us:

*Q1* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/india/
DATE: March 16-18, 2012
LOCATION: Noida (U.P.), India

*Q2* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/dresden/
DATE: April 26-27, 2012
LOCATION: Dresden, Germany

*Q3* MOS-AK/GSA Modeling Workshop
http://mos-ak.org/bordeaux/
DATE: Sept.21, 2012
LOCATION: Bordeaux, France

*Q4* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/
DATE: Dec'2012
LOCATION: San Francisco, CA

Extended MOS-AK/GSA Compact Modeling Committee
http://mos-ak.org/committee.html

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IEEE EDS Webinar: Physics and Technology of Advanced Solar Cells

This email is being sent on behalf of Paul Yu, EDS President,

and Meyya Meyyappan, EDS Vice President of Educational Activities.

Dear Colleague,

As part of our commitment to enhancing the value of membership in EDS, and to advancing the society's mission of fostering the professional growth of its members, we are pleased to invite you to attend a very special Webinar entitled Physics and Technology of Advanced Solar Cells presented by EDS Distinguished Lecturer and IEEE Fellow Prof. Vikram Dalal of Iowa State University.  More info available at http://www.mrc.iastate.edu/NewStaff/VikramDalal.htm.

The webinar will take place on Tuesday, February 14 at 3:00 PM Eastern Time (USA). Register for this event

This event is the follow-up to Prof. Dalal's successful talk entitled Introduction to Physics and Technology of Solar Cells which we presented in December.

Watch Replay.

(Note, you will need your IEEE web account login to register and access the video replay)

Title: Physics and Technology of Advanced Solar Cells
Abstract: The Shockley-Queisser (SQ) limit establishes an upper bound to the conversion efficiency of a single junction solar cell. In this talk, the various approaches to overcome the SQ limit will be discussed.  Multiple junction solar cells, multi-exciton solar cells, intermediate gap solar cells, and photon up and down conversion to increase efficiency beyond the SQ limit will also be addressed.  Multi-junction approaches have succeeded in producing highly efficient III-V solar cells.

In addition, Prof. Dalal will discuss thin film solar cells.  These cells, which use polycrystalline, amorphous or organic materials with inferior electronic properties, are now beginning to be widely used for both large scale utility power and for building-integrated and isolated products.  Prof. Dalal will address the special physical considerations needed to make efficient solar cells out of these materials, including new schemes for enhancing optical absorption and discuss the status of various technologies.

Attendance will be limited to 500 attendees, offered on a first come, first served basis.  As this event is being offered exclusively
to EDS members we request that you do not forward this invitation. Also, given the overwhelming response to our previous webinar,
it would help if you could team up with other EDS members at your institution and thus save a log in port.

Sincerely,

Paul Yu,
EDS President

Meyya Meyyappan,
EDS Vice President of Educational Activities.

IEEE, 445 Hoes Lane, Piscataway, NJ 08854 USA

< http://www.ieee.org/ >

 

New SPICE Model for Silicon Carbide Power MOSFET

Cree Releases SPICE Model for Silicon Carbide Power MOSFET

Behavior-based model enables power electronic design engineers to quantify benefits of silicon carbide MOSFETs in board-level circuit simulation

See the original press release, or read it here:

DURHAM, N.C., February 6, 2012 — Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, has expanded its design-in support for the industry’s first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree’s SiC Z-FET™ MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behavior-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs.

Cree SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC MOSFET SPICE model adds to Cree’s comprehensive suite of design-in support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement SiC power devices into the next generation of power systems.

The Cree SiC MOSFET SPICE model is available for download at www.cree.com/power/mosfet.asp. In addition, customers can download published specifications and detailed design guidelines and request samples. For more information about Cree’s SiC power devices, please visit www.cree.com/power.

About Cree
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs, and LED lighting solutions.

Cree's product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.

For additional product and company information, please refer to www.cree.com

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of our products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2011, and subsequent filings.

Cree is a trademark registered in the U.S. Patent and Trademark Office by and Z-FET is a trademark of Cree, Inc.

Media Contact:
Michelle Murray
Cree, Inc.
Corporate Communications
(919) 313-5505
michelle_murray@cree.com

SISPAD 2012, Denver, CO, USA, Call for Papers

Call for Papers The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures. Date and Location Conference date: September 5-7, 2012 Abstract submission deadline: April 1, 2012 Conference location: Sheraton Denver Downtown Hotel, Denver, Colorado, USA Webpage: http://www.ece.umd.edu/sispad2012 Topics Original papers are solicited in the following subject areas: Electronic Transport in Semiconductor Materials and Devices Device Modeling and Simulation Sensors, Biosensors and Electromechanical Systems Simulation Process and Equipment Modeling and Simulation Compact Models Physical-Level Circuit Simulation New Algorithms for Process and Device Modeling Simulation of Nano and Quantum Devices User Interfaces and Visualization Simulation of Power Devices Photovoltaics and Other Green Technologies The abstract should describe the nature of the presentation, together with references. The text must be single-spaced with 11pt or 12pt font. The abstract is limited to two pages including figures, tables and references. Abstracts should be submitted in PDF format. For more information, please visit: http://www.ece.umd.edu/sispad2012/