I've been looking to a paper from the January Issue of J. Vac. Sci. Technol. B, by Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, and Tadahiro Ohmi, "Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers".
They discuss the differences in both orientacions, and present some nice experimental results, with some theory explaining the differences. If you're interested in noise (other than pub music, I mean), perhaps this can interest you.
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