New papers (November 26, 2008)

A brief selection of papers:

Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect, (abstract) in Electron Device Letters, IEEE

Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs, (abstract) in Electron Devices, IEEE Transactions on

Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope, (abstract) in Electron Devices, IEEE Transactions on

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes, (abstract) in Electron Devices, IEEE Transactions on

Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities, (abstract) in Electron Devices, IEEE Transactions on

Enjoy your reading!