Postdoc position on compact device modeling in Spain

A postdoc position is open in the Department of The Electronic, Electrical and Automatic Control Engineering in the Universitat Rovira i Virgili (Tarragona, Spain). This position is funded by a European project of the type called Marie-Curie Industry Academia Partnership and Pathwatys.

The candidate should have a Ph D in Electrical Engineering, Electronic Engineering, Telecommunication Engineering, Physics, or related disciplines.

The candidate should have enough research experience in the field of semiconductor devices, and must have a very good knowledge of the physics of electron devices. The research project to be carried out can be adapted to the candidate's profile. In any case, it will be related to the European project which will fund this position. Our contribution in these projects is the physics and modeling (in particular compact modeling) of the novel devices addressed by this European project: multi-gate MOSFETs (FinFETs, DG MOSFETs,...), High Voltage MOSFETs and advanced HEMTs.

The postdoc position, which will be a contract, will have a duration of at least 18 months (maybe up to 24 months). The net salary will be around 2000 Euro/month.

Interested applicants should send me their CV by e-mail.
DEADLINE TO RECEIVE APPLICATIONS: October 31 2008

MY E-MAIL ADDRESS IS: benjamin.iniguez@urv.cat

Address:
Benjamin Iñiguez
Nanoelectronics and Photonics Systrems Group (NEPHOS)
Department of Electronic Engineering
Universitat Rovira i Virgili (URV)
Avinguda dels Paisos Catalans 26
43007 Tarragona
SPAIN.