#paper: M. Albrecht, F. J. Klüpfel and T. Erlbacher, "An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs," in IEEE TED, vol. 67, no. 3, pp. 855-862, March 2020
doi: 10.1109/TED.2020.2967507 https://t.co/8fJMfKM9SP
— Wladek Grabinski (@wladek60) February 28, 2020
#paper: Thomas, S. Guiding the design of #negative-#capacitance #FETs. Nat Electron 3, 72 (2020). https://t.co/clMVy6syW9 https://t.co/zh8N3ynGIx pic.twitter.com/s3KFFkQ8lT
— Wladek Grabinski (@wladek60) February 25, 2020
#Opensource licenses: What, which, and why https://t.co/kZlEUC5CQE pic.twitter.com/G1WotNhQp8
— Wladek Grabinski (@wladek60) February 25, 2020
We are pleased to announce our monthly seminar for March
Wide Bandgap Devices Enabling High Power and High Frequency Electronics
Texas Instruments Conference Center
2900 Semiconductor Dr, Building E, Santa Clara, CA 95051
FREE PIZZA PROVIDED
Register Here: https://www.surveymonkey.com/r/R7VKQ3M
Abstract:
We live in extremely exciting times, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Renewable energy is now a reality. IoT with the ever-expanding need for sensors and low power electronics is changing our lives dramatically. Robotics and autonomous vehicles are upon us. Both new and existing applications are demanding physical electronics solutions with new materials, devices and heterogeneous integration to drive these innovations to their full potential.
Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing conversion losses is not only critical for minimizing consumption of limited resources, it simultaneously enables new compact and reduced weight solutions, the basis for a new industry offering increased power conversion performance at reduced system cost. Equally importantly, GaN has opened the door to other ultra-wide bandgap materials such as Diamond, Aluminum Nitride and Gallium Oxide.
More information at the IEEE EDS Santa Clara Valley-San Francisco Chapter Home Page
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<http://www.mos-ak.org/costa_rica_2020/>
Escazu, west of San José,Costa Rica
(any related enquiries can be sent to register@mos-ak.org)
Is #opensource software licensing broken? https://t.co/VBw6rf0nyi pic.twitter.com/ECoreNRJR1
— Wladek Grabinski (@wladek60) February 24, 2020
#paper: R. Kotecha, G. Moreno, B. Mather and S. Narumanchi, "Modeling Needs for Power Semiconductor Devices and Power Electronics Systems," 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019, pp. 12.1.1-12.1.4. https://t.co/x6825AQzZ4 pic.twitter.com/Cmrty3XJHJ
— Wladek Grabinski (@wladek60) February 21, 2020
