Microsoft #MSDOS #opensource https://t.co/e7Qeg2fMqH

Microsoft #MSDOS #opensource https://t.co/e7Qeg2fMqH

— Wladek Grabinski (@wladek60) September 30, 2018

from Twitter https://twitter.com/wladek60

September 30, 2018 at 06:09PM
via IFTTT

New Charge Pumping Current #Model Assuming Exponential Tails in the Trap Energy Distribution. This modified expression leads to a different method of extracting the trap emission time constant https://t.co/LUtOI11Och

New Charge Pumping Current #Model Assuming Exponential Tails in the Trap Energy Distribution. This modified expression leads to a different method of extracting the trap emission time constant https://t.co/LUtOI11Och

— Wladek Grabinski (@wladek60) September 28, 2018

from Twitter https://twitter.com/wladek60

September 28, 2018 at 12:20PM
via IFTTT

System76 To Release A "New #opensource #Computer" https://t.co/CglryyCNZU https://t.co/SN8OYHydYb

System76 To Release A "New #opensource #Computer" https://t.co/CglryyCNZU pic.twitter.com/SN8OYHydYb

— Wladek Grabinski (@wladek60) September 27, 2018

from Twitter https://twitter.com/wladek60

September 27, 2018 at 05:14PM
via IFTTT

[paper] Importance of complete characterization setup on onwafer TRL calibration in sub-THz range

Chandan Yadav, Marina Deng, Magali De Matos, Sebastien Fregonese

and  Thomas Zimmer

IMS Laboratory, University of Bordeaux

351 cours de la Libération – 33405 Talence cedex, France

Abstract: In this paper, we present the effect of different sub-mm and mm-wave probe geometry and topology on the measurement results of dedicated test-structures calibrated with on-wafer TRL. These results are compared against 3D EM simulation of the intrinsic test-structures. To analyze difference between the measured and intrinsic EM simulation results, onwafer TRL calibration performed on EM simulation results of a dedicated test-structure is also presented. 

FIG: 3D view of the Open-M1 where metal-1 (M1) does not have connection with ground as shown in the enlarged view.

#Modeling of Electron Devices Based on 2-D Materials. Shortly analyze the main open challenges of modeling 2-D-based electron devices. https://t.co/GkhpFYFS3H

#Modeling of Electron Devices Based on 2-D Materials. Shortly analyze the main open challenges of modeling 2-D-based electron devices. https://t.co/GkhpFYFS3H

— Wladek Grabinski (@wladek60) September 26, 2018

from Twitter https://twitter.com/wladek60

September 26, 2018 at 02:48PM
via IFTTT

ST and Leti to make #GaN-on-#Si power #transistors https://t.co/yNCDikxtpE #paper

ST and Leti to make #GaN-on-#Si power #transistors https://t.co/yNCDikxtpE #paper

— Wladek Grabinski (@wladek60) September 24, 2018

from Twitter https://twitter.com/wladek60

September 25, 2018 at 12:15AM
via IFTTT

Contacting and Gating #2D #Nanomaterials https://t.co/IgqlN6pi1c #paper

Contacting and Gating #2D #Nanomaterials https://t.co/IgqlN6pi1c #paper

— Wladek Grabinski (@wladek60) September 22, 2018

from Twitter https://twitter.com/wladek60

September 22, 2018 at 02:11PM
via IFTTT