Mar 9, 2018

[1889 reeds] Open-source circuit simulation tools for RF compact semiconductor device #modeling https://t.co/OeqgG1ChLD


from Twitter https://twitter.com/wladek60

March 09, 2018 at 10:30AM
via IFTTT
Posted by at No comments:
Labels: , ,

Mar 6, 2018

Experimental Observation and Simulation #Model for Transient Characteristics of Negative-Capacitance in... https://t.co/Q73Mvkixlp


from Twitter https://twitter.com/wladek60

March 06, 2018 at 02:31PM
via IFTTT
Posted by at No comments:
Labels: , ,

Experimental Observation and Simulation #Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor https://t.co/ijwoKP4zCM


from Twitter https://twitter.com/wladek60

March 06, 2018 at 02:31PM
via IFTTT
Posted by at No comments:
Labels: , ,

ENBIOS-2D Lab

Aldi Hoxha1, Paolo Scarbolo1, Andrea Cossettini2, Federico Pittino3, Luca Selmi4
1. DPIA, Università degli Studi di Udine 2. University of Udine 3. Università di Udine 4
DPIA, Università degli Studi di Udine, Italy

Abstract: ENBIOS-2D Lab is a tool to illustrate and to study simple Ion Sensitive Field Effect Transistor structures in two dimensions. Together with its companion tool ENBIOS-1D Lab, it is meant for use as a teaching tool in support of undergraduate or graduate courses on the basic physics of transduction in ion and particle sensors, and to assist early stage researchers getting familiar with some basic concepts in the field. At the present stage, ENBIOS-2D Lab supports simulation and visualization of DC I-V characteristics, impedance/admittance spectra as well as DC and AC potential/carrier/ion distributions in simple two-dimensional ISFET structures. A broader set of case studies will become available with future releases of the tool. The companion ENBIOS-1D Lab tool offers the possibility to simulate simple Electrolyte/Insulator/Semiconductor systems in one-dimension. The physical system is modelled with the Poisson/Boltzmann (DC) and Poisson/Nernst/Planck - Poisson/Drift/Diffusion (AC small signal) equations coupled to the site-binding charge model equations at the Electrolyte/Insulator interfaces. Dedicated models are implemented for the frequency and salinity dependence of the electrolyte electrical permittivity and the temperature dependence of the ions' mobility (in water solvent). ENBIOS-2D Lab is powered by ENBIOS, (Electronic Nano-BIOsensor Simulator), a general purpose three-dimensional Control Volume Finite Element Method (CVFEM) simulator developed in-house at the University of Udine - Italy. ENBIOS simulates in three dimensions (3D) the DC and AC small signal impedance response to ions and micro/nanoparticles of three-dimensional devices made of semiconductor, insulator and electrolyte materials.
References:

[1] P. Scarbolo, E. Accastelli, F. Pittino, T. Ernst, C. Guiducci, L. Selmi, “Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors”, Proceedings of the 2015 Transducers - 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 21-25 June 2015, pp. 2188-2191

[2] Paolo Scarbolo, Enrico Accastelli, Thomas Ernst, Carlotta Guiducci and Luca Selmi, "Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons", IEEE Nano Conference, August 2016.

[3] Federico Pittino and Luca Selmi, "Use and comparative assessment of the CVFEM method for Poisson–Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes", Comput. Methods Appl. Mech. Engrg., v.278, (2014), pp.902–923.


Posted by at No comments:
Labels: , , , ,

Mar 4, 2018

A New Analytical Pinned Photodiode Capacitance #Model - IEEE Journals & Magazine https://t.co/3IiJn8I4MH https://t.co/1Hea8LzBUn


from Twitter https://twitter.com/wladek60

March 04, 2018 at 12:45PM
via IFTTT
Posted by at No comments:
Labels: , ,

A New Analytical Pinned Photodiode Capacitance #Model - IEEE Journals & Magazine https://t.co/3IiJn8I4MH


from Twitter https://twitter.com/wladek60

March 04, 2018 at 12:45PM
via IFTTT
Posted by at No comments:
Labels: , ,

Mar 2, 2018

[paper] Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Dondee Navarro1, Fernando Herrera1, Hiroshi Zenitani2, Mitiko Miura-Mattausch1, Naoto Yorino2, Hans Jürgen Mattausch1,2, Mamoru Takusagawa3, Jun Kobayashi3 and Masafumi Hara3

Published 19 February 2018 • © 2018 The Japan Society of Applied Physics
Japanese Journal of Applied Physics, Volume 57, Number 4S

1 HiSIM Research Center, Hiroshima University, Hiroshima 739-8530, Japan
2 Graduate School of Engineering, Hiroshima University, Hiroshima 739-8530, Japan
3 Toyota Motor Corporation, Toyota, Aichi 470-0309, Japan

Abstract: A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current–voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures [read more: https://doi.org/10.7567/JJAP.57.04FR03]

Fig.: Electron current density in a JBS cross-section. JBS has a peak density at the n− region adjacent to the p+ implant.



Posted by at No comments:
Labels: , ,
Subscribe to: Posts (Atom)