May 22, 2013

[mos-ak] Workshop on Compact TFT Modeling for Circuit Simulation

Call for Papers
5th International Workshop on Compact Thin-Film Transistor (TFT) Modeling for Circuit Simulation (CTFT)
CEA-LITEN, MINATEC Campus, Grenoble, France, June 21, 2013

In recent years, the increasing use of active matrix flat-panel displays and bio-medical imagers in commercial electronic products has drawn a significant attention to thin-film transistors (TFT) and technologies. TFTs on amorphous- and poly-silicon as well as newly emerging organic, transparent metal oxide and nano-composite semiconductor technologies are becoming increasingly common. For example, flat panel displays are finding widespread use in many products such as cellular phones, personal digital assistants (PDAs), camcorders, laptop personal computers (PCs), to name a few. The active matrix display is composed of a grid or matrix of picture elements called as "pixels". Thousands or millions of these pixels together create an image on the display, in which the TFTs act as switches to individually turn each pixel. More increasingly TFTs are starting to be used as analog circuit elements for rudimentary signal conditioning. Therefore, physically-based compact modeling of TFTs for circuit simulation is crucial to accurately and reliably predict TFT behavior in the active matrix. A concentrated R&D effort is critical for developing physically-based compact TFT models for emerging thin-film technologies, and significant R&D efforts along these lines are underway world-wide.

The CTFT workshop will provide a forum for discussions and current practices on compact TFT modeling. The 2013 CTFT workshop edition will be held on June 21 in Grenoble (France) in combination with the 9th International Conference on Organic Electronics (ICOE, June 18-20, www.icoe2013.org ). The CTFT workshop is sponsored by IEEE EDS Compact Modeling Technical Committee in joint collaboration with CEA-LITEN, the Universitat Rovira i Virgili (Tarragona Spain) and the University of Cambridge (UK).

A partial list of the areas of interest includes:
  • Physics of TFTs and operating principles
  • Compact TFT device models for circuit simulation
  • Model implementation and circuit analysis techniques
  • Model parameter extraction techniques
  • Applications of compact TFT models in emerging products
  • Compact models for interconnects in active matrix flat panels
Abstract (500 Word) Submission deadline:  May 24, 2013
Prospective authors should submit a 500-word abstract to: Bogdan Mihai Nae (nae.bogden@urv.cat)
Submission of a 1-page or 2-page single-column paper to be included in proceedings: June 8, 2013.
Download the word template here for the 1-page or 2-page final version of the paper.

 

Committee Members      

Anis Daami, CEA-LITEN, France (General Co-Chair)

François Templier, CEA-LITEN, France (General Co-Chair)

Vincent Fischer, CEA-LITEN, France

Arokia Nathan, Cambridge University, UK

Benjamin Iniguez, Universitat Rovira i Virgili, Spain

Jamal Deen, McMaster University, Canada

Bill Milne, Cambridge University, UK

Andre Sazonov, University of Waterloo, Canada

John Robertson, Cambridge University, UK

Xiaojun Guo, Shanghai Jiaotong University, China

Flora Li, Polymer Vision, The Netherlands

Hyun Jae Kim, Yonsei University, Korea

Samar Saha, Silterra Corp., USA

Zhou Xing, Nanyang Technological University, Singapore

Norbert Fruehauf, University of Stuttgart, Germany

Peyman Servati, University of British Columbia, Canada

Man Wong, HKUST, Hong Kong

 

 

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May 3, 2013

[mos-ak] [Call for Papers] 11th MOS-AK/GSA ESSDERC ESSCIRC Workshop Sept. 20, 2013 Bucharest

Together with the Organizing Committee and Extended MOS-AK/GSA TPC Committee, we have pleasure to invite to the 11th MOS-AK/GSA ESSDERC ESSCIRC Workshop on Sept. 20, 2013 in Bucharest (RO). The event will open next decade of enabling compact modeling R&D exchange.

Topics to be covered include the following:
  • Advances in semiconductor technologies and processing
  • Compact Modeling (CM) of the electron devices
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • CM of passive, active, sensors and actuators
  • Emerging Devices, CMOS and SOI-based memory cells
  • Microwave, RF device modeling, high voltage device modeling
  • Nanoscale CMOS devices and circuits
  • Technology R&D, DFY, DFT and IC Designs
  • Foundry/Fabless Interface Strategies
In the terms of participation, intending participants and authors should also note the following dates: 
  • Call for Papers - May 2013
  • 2nd Announcement - June 2013
  • Final Workshop Program - July, 2013
  • MOS-AK/GSA Workshop - Sept. 20, 2013
Abstract on-line submission <http://www.mos-ak.org/bucharest/abstracts.php>

Further details and updates: <http://www.mos-ak.org/bucharest/
Email contact: <workshops@mos-ak.org

- with regards - WG (for the MOS-AK/GSA Committee

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May 1, 2013

13th HICUM Workshop 2013


HICUM Workshop at TU-Delft, May 27-28, 2013
The HIgh CUrrent Model (HICUM) has become an industry standard and one of the most suitable compact models for modern HBTs fabricated in latest process technologies covering a wide range of high frequency and mmW applications.
Since 2001, the annual HICUM Workshop has become a technical forum for the needs and interests of model users and developers for discussing the present trends and future needs of the bipolar transistor modeling and circuit design community.

Workshop Highlights:
  • Special presentation by Prof. Spirito on mm-wave on-wafer measurements
  • Various presentations covering the modeling of various bipolar transistor phenomena, new parameter extraction strategies, production-type model development, model testing and performance comparisons
  • Special presentations on benchmark circuits for model verification (solicited)

Apr 29, 2013

[mos-ak] [press note] Spring MOS-AK/GSA Workshop in Munich; April 11-12, 2013

press note highlighting recent Spring MOS-AK/GSA Workshop in Munich is available online:
http://www.gsaglobal.org/2013/04/mos-akgsa-munich-workshop-press-note/

The MOS-AK/GSA Modeling Working Group is coordinating several upcoming modeling events: a special compact modeling session at the MIXDES Conference in Gdynia (https://www.mixdes.org); an autumn Q3/2013 MOS-AK/GSA workshop in Bucharest (http://www.mos-ak.org/bucharest/), a winter Q4/2013 MOS-AK/GSA meeting in Washington DC, and a spring Q2/2014 MOS-AK/GSA meeting in London (http://www.mos-ak.org).

Harrison Beasley
Technical Working Groups Manager
Global Semiconductor Alliance (GSA)


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Apr 26, 2013

[mos-ak] BSIM6.0 is industry standard model

recently, Prof. Yogesh Singh Chauhan, the BSIM6 project coordinator and lead developer, has announced that the BSIM6.0 has been approved as industry standard bulk MOSFET model by CMC on April 18, 2013. The BSIM6 model Verilog-A code, its manual and related documents will be available thru its website.

Related links:
BSIM6 Model Home Page
BSIM-EPFL Collaboration Announcement

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[mos-ak] [on-line publications] Spring MOS-AK/GSA Workshop in Munich; April 11-12, 2013

Together with the workshop host, Prof. Dr. Doris Schmitt-Landsiedel, Lehrstuhl fur Technische Elektronik, TUM and Extended MOS-AK/GSA TPC Committee and the workshop sponsors MunEDA and Tanner EDA as well as the IEEE EDS Chapter Germany, the technical program cosponsor, we have organized recent spring MOS-AK/GSA Workshop in Munich. The workshop's presentations are available on-line at <http://www.mos-ak.org/munich_2013/

The MOS-AK/GSA Modeling Working Group coordinates several upcoming modeling events: a special compact modeling session at the MIXDES Conference in Gdynia (PL) (https://www.mixdes.org);  an autumn Q3/2013 MOS-AK/GSA workshop in Bucharest (RO) (http://www.mos-ak.org/bucharest/), a winter Q4/2013 MOS-AK/GSA meeting in Washington DC, USA, spring Q2/2014 MOS-AK/GSA meeting in London (http://www.mos-ak.org).

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Apr 24, 2013

TED Call for Papers on Compact Modeling of Emerging Devices

Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design for almost five decades. As the mainstream CMOS technology is scaled into the nanometer regime, development of a truly physical and predictive CM for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge. The last call for a special issue on “advanced compact models and 45-nm modeling challenges” was in 2005. Seven years have passed, new technology nodes have been implemented, compact models have evolved and new compact models as well as compact models for new devices are being developed. Therefore, there is a need for another special issue dedicated to the advancement and challenges in core field-effect transistor (FET) models for 32-nm technologies and beyond as well as emerging technologies. For the core FET models, the associated noise/mismatch and reliability/variability models as well as proximity effects have become an essential part of the modeling effort. High-frequency, high-voltage, high-power, high-temperature devices have been extensively investigated, and their CMs are being reported in the literature. Device/circuit interaction and layout-dependent proximity effects are also hot topics today that are essential in nanometer chip designs. It is timely to report advances in these CMs in the 32-nm/22-nm technology era.

Concurrently, nonclassical MOSFETs as well as their CMs, such as multigate FinFETs and nanowire FETs, partially/fully-depleted ultrathin body (UTB) SOT, and thin-film transistors (TFTs), have emerged over the past decades. With the announcement of FinFETs being used in 22-nm and sub-22nm technology nodes, the need for such core models for fabless designers becomes an urgent reality. In these nonclassical devices, transistors are essentially short-channel, narrow-width, and thin-body. Tt is also an interesting topic to discuss and debate on the two different formalisms “top-down” drift-diffusion formulation adding ballistic effects versus “bottom-up” quasi-ballistic formulation adding scattering effects for modeling the real devices that are somewhere in between. Heterogeneous integration of various devices into the CMOS platform also becomes an important trend.
In addition, it is also timely to report advances in CMs of emerging devices beyond traditional silicon CMOS, such as different materials (III-V/Ge channel, organic) and different source/drain injection mechanisms (Schottky-barrier, tunneling, and junctionless FETs). These emerging device options for future VLSI building blocks have been studied extensively, while good physical CMs are still lacking. The special issue in these topics will stimulate research and development to promote modeling efforts such that theory would lead and guide technology realization and selection for future generations.
The special issue for the TRANSACTIONS ON ELECTRON DEVICES on compact modeling of emerging devices is devoted to the review and report of advancements in CMs for 32-nm technologies and beyond, including bulk and nonclassical CMOS and their associated noise/mismatch and reliability/variability models, as well as various emerging devices as future generation device options. It is timely as the industry is in the transition from traditional planar bulk-CMOS towards vertical FinFET technologies, and exploration of heterogeneous integration with various materials and structural choices.


Please submit manuscripts by using the following URL: http://mc.manuscriptcentral.com/ted
MAKE SURE TO MENTION THE SPECIAL ISSUE IN THE COVER LETTER

Paper submission Deadline: June 30, 2013
Scheduled Publication Date: February 2014

Guest Editors:
Xing Zhou, Nanyang Technological University, 
Jamal Deen, McMaster University, 
Benjamin Iniguez, Universitat Rovira i Virgili, 
Christian Enz, Swiss Federal Institute of Technology, 
Rafael Rios, Intel Corp.

If you have any questions about submitting a manuscript, please contact:
IEEE EDS Publications Office
445 Hoes Lane Piscataway JN 08854
Phone: +1 732 562 6855

Digital Object Identifier 10.1109/TED.2013.2253418