A paper in the Feb. issue of IEEE TED

A Physically Based Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nanoscale MOSFETs Karim, M. A.   Haque, A.   Department of Electrical and Electronic Engineering, United International University, Dhaka; This paper appears in: Electron Devices, IEEE Transactions on Publication Date: Feb. 2010 Volume: 57,  Issue: 2 On page(s): 496-502 ISSN: 0018-9383 Digital Object Identifier: 10.1109/TED.2009.2037453 First Published: 2009-12-28 Current Version Published: 2010-01-19

Abstract We present a physically based explicit analytical model for the quantum mechanical (QM) correction to the surface potential of nanoscale metal–oxide–semiconductor (MOS) devices. The effect of wave function penetration into the gate dielectric is taken into account. Instead of using the band-gap widening approach, which indirectly includes QM correction, the proposed correction term is directly added to the semiclassical surface potential. Under accumulation bias, charges in extended states and quantized states contribute to the surface potential in different ways. The proposed QM correction considers this difference in contributions. Comparison with two existing analytical QM correction models and two self-consistent QM numerical models show that the proposed correction is more accurate than the existing analytical models. The improvement achieved under the accumulation bias is particularly significant. The gate $C$– $V$ characteristics of a number of different MOS devices have been simulated using the proposed correction. Excellent agreement with published experimental data has been observed.

Analog FastSpice RF delivers noise analysis for RF circuits

By Rick Nelson, Editor-in-Chief -- EDN, 12/22/2009

Berkeley Design Automation Inc has announced AFS RF (Analog FastSpice radio frequency), which Chief Operating Officer Paul Estrada calls the industry’s first true Spice-accurate noise-analysis tool for RF circuits. AFS RF accurately analyzes nanometer-scale device noise impact for all types of prelayout and postlayout circuits, ensuring early insight into its impact on performance, power, and area.
 Before the emergence of AFS RF, designers had to use limited-spectrum RF tools that can only approximate device noise impact on RF circuits, Estrada explains. Such approximations are increasingly inaccurate with decreasing process geometries, often becoming grossly inaccurate in nanometer-scale circuits. Circuits with sharp transitions, such as switched-capacitor filters, charge pumps, and dividers; high-frequency circuits, such as RF front-end blocks; and oscillators are especially sensitive to these inaccuracies. Without accurate analysis, designers must include expensive design margin or risk missing specifications in silicon.
 Using the industry’s first full-spectrum device-noise-analysis engine, Analog FastSpice RF provides true Spice accuracy for every run. For complex circuits, it is five to 10 times faster than traditional RF tools that can only approximate device-noise effects. AFS RF features the DNA (device noise-analysis) Advisor to characterize DNA requirements, high-capacity periodic-steady-state analysis for greater than 100,000-element postlayout circuits, full-spectrum periodic-noise analysis with true Spice accuracy, full-spectrum total oscillator-device-noise analysis capability with phase and amplitude noise, and harmonic balance for fast single-tone analysis of moderately nonlinear circuits.


You can read the full post here...

EAMTA 2010 / CAMTA - CUMTA 2010

EAMTA 2010 [www.eamta.com.ar]
The fifth School of Micro and Nanoelectronics will take place from October 1 - 9, 2010, in the facilities of Instituto de Ingeniería Eléctrica of Universidad de la República del Uruguay and Departamento de Ingeniería Eléctrica Universidad Católica del Uruguay.

CAMTA - CUMTA 2010 [www.eamta.com.ar]
The Conference section of the School will take place on Thursday October 7 and Friday October 8, 2010. All papers will be presented in poster format, to stimulate discussion and feedback. Tutorials will be in charge of distinguished lecturers.

Contact Information: For the 2010 edition of EAMTA, Dr. Fernando Silveira and Dr. Alfredo Arnaud will be the General Chairs: [eamta.ar (at) gmail.com]

ISSCC 2010 Preview: Assessing '05 predictions

A couple of safe ISSCC'05 bets reviewd by Don Scansen. Have ISSCC organizers learned something by looking back?

Agilent Technologies Announces YouTube Channel for Agilent EEsof EDA

Agilent Technologies Inc. has announced the launch of the Agilent EEsof EDA channel on YouTube. The channel features more than 100 informational videos with subtitles in 50 different languages. The videos offer detailed application information on the Advanced Design System, Genesys, SystemVue, and other electronic design automation software from Agilent EEsof. The channel is designed to provide tutorial information to Agilent’s large installed base of users, or to anyone wanting to learn more about Agilent EEsof’s design software and high-frequency design applications. [more]

Some papers

I've seen five interesting papers in the current issue of the International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Volume 23, Issue 2, 2010.):

Pages: 88-106

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
Joaquín Alvarado, Benjamin Iñiguez, Magali Estrada, Denis Flandre, Antonio Cerdeira
http://www3.interscience.wiley.com/journal/122527099/abstract

Published Online: 30 Jul 2009
DOI: 10.1002/jnm.725

Pages: 107-126
New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors
J. C. Tinoco, J.-P. Raskin
http://www3.interscience.wiley.com/journal/122581374/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.726

Pages: 127-139
Modelling CoolMOSC3 transistor characteristics in SPICE
Krzysztof Górecki, Janusz Zar?bski
http://www3.interscience.wiley.com/journal/122580694/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.727

Pages: 140-150
The compact d.c. electrothermal model of power MOSFETs for SPICE
Janusz Zar?bski
http://www3.interscience.wiley.com/journal/122582111/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.728

Pages: 151-163
Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models
Seyed Majid Homayouni, Dominique Schreurs, Bart Nauwelaers
http://www3.interscience.wiley.com/journal/123242581/abstract

Published Online: 15 Jan 2010
DOI: 10.1002/jnm.740

MIXDES 2010 paper submission deadline

The deadline for the MIXDES paper registration passes in approximately in 6 weeks (Feb 28th, 2010). The most current information about the conference, regular and special sessions invited talks etc. can be found at the in the Final Call for Papers.

This year the conference will be organized in Wroclaw, one of the oldest and most beautiful cities in Poland. It is located in southwestern Poland, 160 km from Germany and 120 km from the Czech Republic. It is well equipped with communication facilities: international airport, railways and highways, so is quite easy to get there.

As in previous years the papers should be prepared following the paper formatting requirements, however the format may be corrected till the final paper versions deadline (May 15th, 2010). The paper registration and updates should be proceeded by your personal account at the conference web page after log on.

With further questions please contact Dr. Mariusz Orlikowski, the MIXDES 2010 Conference Secretary.