Nov 11, 2009

CEA-LITEN selects InfiniScale for Organic Electronic devices modeling

InfiniScale today announced that CEA-LITEN has selected InfiniScale’s TechModeler for its organic electronic devices modeling needs.
You can see by their public declarations that they are quite happy:

“InfiniScale’s modeling tool allowed us to shrink our development cycle by a large factor” commented Isabelle Chartier Organic Electroniv program manager at CEA-LITEN- “CEA-Liten is deeply involved in printing Organic Electronic devices and circuits, we target to demonstrate, before the end of 2009, a first all printed organic CMOS circuit. Modeling our devices versus design and technology parameters is critical for our technological developments. Therefore, fast prototyping and fast development cycles achieved with Infiniscale is key to stay on top of the Emerging and promising Organic Electronic market”

“We are pleased by CEA-LITEN commitment “said Dr Firas MOHAMED, CEO of Infiniscale “InfiniScale has taken position on this new industry where there is a need to grow at a fastest possible pace. After a close collaboration through an important R&D project on organic electronic (Printronics a Minalogic cluster project), CEA-LITEN decided to adopt our technology for its advanced organic devices modeling.

We are very pleased to see that our modeling technology, which is already recognized by major semi-conductor players, kept its promise for the organic ambitious industry”.



You can read the full press release here.

Nov 5, 2009

An interesting paper in the Intl. Jornal of Numercal Modelling (vol 22(6))

This is not exactly compact modelling, but it's a nice thing to see:

SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account

Janusz Zarbski, Krzysztof Górecki
Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland

Abstract
This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors - BD285 and 2N3055 - were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.

You can access the online version here.

55th IEEE IEDM conference

The 55th annual IEEE IEDM conference will be held at the Hilton Baltimore on December 7-9, 2009 preceded by a day of Short Courses on Sunday, Dec. 6. The world¹s best scientists and engineers in the field of electronics will showcase their work in a program of papers, panels, special sessions, Short Courses and other events that will spotlight more leading work in more areas of the field than any other conference.

The advance registration deadline is November 16 and the deadline for hotel reservations is November 6. For registration and other information, visit the IEDM 2009 home page at http://www.ieee-iedm.org

As a novelty, IEDM can be followed in twitter and facebook... which I think is a good move.

Nov 3, 2009

MEMSTECH 2010

6th International Conference
Perspective Technologies and Methods in MEMS Design
Polyana, UKRAINE, 20 - 23 April 2010

Organized by:
  • Lviv Polytechnic National University, CAD Department, Ukraine
  • Warsaw University of Technology, Institute of Telecommunication, Poland
  • IEEE MTT/ED/AP/CPMT/SSC West Ukraine Chapter
Supported by Lviv Regional State Administration

Topics include, but not limited to:
  • Analysis, modelling, research and design methods of microsensors and microactuators
  • Software systems, models, algorithms, methods and strategies of embedded systems design
  • Field issues in embedded systems modelling and design
  • Issues of testing, verification, reliability and optimization in embedded systems modelling and design
  • Sensors and actuators systems, nanotechnology
  • Applications for electron device design
  • Information Technology. Engineering Application of Informatics. Engineering Education
Important Dates:
  • February 15, 2010
    • Deadline for abstract submissions (at least 400 words in plain text file, in English)
  • March 15, 2010
    • Notification of abstract acceptance
  • April 02, 2010
    • Deadline for final Camera-Ready Papers submissions (in English)
Read more...

A paper in Thin Solid Films

I've found a paper that may interest you:

The quantum size effects on the surface potential of nano-crystalline silicon thin film transistors

Ling-Feng Mao

(Available online 29 October 2009)

Abstract

The impact of the grain size of nc-Si (nano-crystalline silicon) on the surface potential of doped nc-Si TFTs (thin film transistors) is discussed. Quantum size effects cause the change in both band-gap and dielectric constant of nc-Si. Numerical calculation of the surface potential in nc-Si TFTs shows that the diameter of nc-Si has a larger effect on the surface potential of nc-Si TFTs. The results demonstrate that, for medium size (7 ~ 50 nm), the change in the band-gap of nc-Si should be considered, whereas, for small size (< 7 nm), the change in the dielectric constant of nc-Si should be considered. A simplified surface potential equation for nc-Si TFTs under strong inversion condition is proposed, and shows good agreement with the original equation via numerical calculation.


Have fun!