Sep 30, 2008

2009 Symposium on VLSI Technology

The 2009 IEEE Symposium on VLSI Technology will be held from June 15 to June 17 at Rihga Royal Hotel in Kyoto, Japan.

The IEEE Symposium on VLSI Technology is one of the most prestigeous conferences on VLSI devices and processes. It is also a very competitive and tough conference. Papers should always be innovative enough regarding VLSI devices. Some of the topics explicitly mentioned in the Call for Papers are "processes and device modeling of VLSI devices" and "theories and fundamentals" related to VLSI devices. Therefore, researchers in device modeling (including compact modeling) can submit papers to the IEEE Symposium on VLSI Technology, but it should be remarked that these models or theories should be real breakthroughs.

The deadline is January 14.

There will be a Best Student Paper Award. The Symposium will cover the travel mexpenses and registration fee for the award recipient to attend the 2009 Symposium.

The IEEE Symposium on VLSI Technology will be held in conjunction with the IEEE Symposium on VLSI Circuits, which is one of the top conferences in the field of integrated circuits. This Symposium is also very demanding and competitive. Papers should be really breakthroughs to be accepted.

Besides, a satellite workshop, the 2009 Silicon Nanoelectronics Workshop, will be held at the same location as the VLSI Symposia on June 13-14 2009.

Well, despite the symposium is so demanding, it is worthy to work hard to make a suitable paper for this Symposium. And it is also a good opportunity to enjoy some days in Kyoto, one of the most beautiful cities in Japan!

IEEE TED Special issue on Compact Interconnect Models for Giga Scale Integration

This Special Issue in IEEE Transactions on Electron Devices will be devoted to the research and development activities on emerging compact interconnection models for circuit simulation for the 65 nm technological dode and below.

Topics include compact models for RLCK interconnects, Cu/low-K technologies, Carbon nanotube interconnects and Graphene Nano-Ribbon interconnects, RF and Microwave, 2D/3D compact interconnect models, interconnect modeling for SoC design, interconnect variability and statistical modeling,...

The deadline for paper submission is January 16 2009.

Postdoc position on compact device modeling in Spain

A postdoc position is open in the Department of The Electronic, Electrical and Automatic Control Engineering in the Universitat Rovira i Virgili (Tarragona, Spain). This position is funded by a European project of the type called Marie-Curie Industry Academia Partnership and Pathwatys.

The candidate should have a Ph D in Electrical Engineering, Electronic Engineering, Telecommunication Engineering, Physics, or related disciplines.

The candidate should have enough research experience in the field of semiconductor devices, and must have a very good knowledge of the physics of electron devices. The research project to be carried out can be adapted to the candidate's profile. In any case, it will be related to the European project which will fund this position. Our contribution in these projects is the physics and modeling (in particular compact modeling) of the novel devices addressed by this European project: multi-gate MOSFETs (FinFETs, DG MOSFETs,...), High Voltage MOSFETs and advanced HEMTs.

The postdoc position, which will be a contract, will have a duration of at least 18 months (maybe up to 24 months). The net salary will be around 2000 Euro/month.

Interested applicants should send me their CV by e-mail.
DEADLINE TO RECEIVE APPLICATIONS: October 31 2008

MY E-MAIL ADDRESS IS: benjamin.iniguez@urv.cat

Address:
Benjamin Iñiguez
Nanoelectronics and Photonics Systrems Group (NEPHOS)
Department of Electronic Engineering
Universitat Rovira i Virgili (URV)
Avinguda dels Paisos Catalans 26
43007 Tarragona
SPAIN.

ISCAS'09

The 2009 IEEE International Symposium of Circuits and Systems (ISCAS 2009) will be held in Taipei (Taiwan), on 24-27 May 2009. It will be hosted by the hosted by the National Cheng Kung University.

ISCAS is the largest conference in the area of Circuits and Systems. It is sponsored by the IEEE Circuits and Systems Society. Prestigeous speakers in this field are always invited.

ISCAS 2009 will focus on circuits and systems for Human Centric Smart Living Technologies, including mobile communications, multimedia systems, sensor interface, and biosystems.

The deadline for regular paper submission is October 10 2008 As indicated in the Call for Papers, the scope of ISCAS 2009 includes all topics related to integrated circuits and systems. Papers on compact modeling for circuit design are considered to address some of the topic of the call. In fact, every year a number of interesting papers on compact modeling are presented at ISCAS.

It is important to mention that in ISCAS posters are very well considered, as important as oral presentations. Many authors choose poster as their presentation format.

On the other hand, a "a very entertaining social program is planned. Special tours to tourist attractions will be available to the Symposium attendees and their guests." It Sounds promising, anyway.

Sep 29, 2008

ITC'09

The 5th International TFT Conference (ITC'09) will take place in the École Polytechnique (near Paris, France) on March 5-6 2009.

ITC is an annual conference which addresses all topics related to Thin Film Transistors (TFTs), from process to circuits, also including simulation and compact modeling.

Abstracts should be submitted not later than November 30 for evaluation.

A number of talks will be given by prestigeous invited speakers.

Key Dates / Schedule
First Call-for-Papers.......................................................................Sep.15, 2008
Submission of Short Abstract........................................................Nov.30, 2008
Acceptance Notification...................................................................Jan.1, 2009
Submission of camera ready manuscript..........................................Feb.1, 2009
Advance Registration.......................................................................Feb.1, 2009

Separate Cover letter
Title of Paper Oral/Poster Preference
Full name, complete mailing address, email address, telephone and fax number of the principal author
Name, Affiliation, city, state, country of additional authors

Abstract
Objective and Background: Briefly describe the goals and intent of your project and give background
factors that led to the new results
Results: Describe, in detail, the specific results that will be presented at the ITC’09.
Impact: Discuss the significance of your work and compare your findings with previously published
work.
All interested authors are requested to submit abstracts for evaluation via the ITC ’09 web site.

No doubt ITC 2009 will be a very interesting conference. Besides, ITC '09 will be held jointly with the SID Mid-Europe Chapter Spring Meeting, an annual meeting attracting many European display professionals.

Sep 27, 2008

IRPS 2009

The 2009 IEEE International Reliability Physics Symposium (IRPS) will be held in Montreal, Quebec, Canada, on April 26-30 2009. The venue will be The Fairmont Queen Elizabeth hotel.


For over 40 years, IRPS has been the premier conference for engineers and scientists to present new and original work in the area of microelectronic device reliability. IRPS is now co-sponsored by the IEEE Reliability Society and the IEEE Electron Devices Society. This co-sponsored event has drawn participants from the United States, Europe, Asia and all other parts of the world. IRPS 2009 promotes the reliability and performance of integrated circuits and microelectronic assemblies through an improved understanding of failure mechanisms in the user’s environment, while demonstrating the latest state-of-the-art developments in electronic reliability.

The focus of the symposium is the 3-day plenary/parallel sessions featuring original work that identifies new microelectronic failure or degradation mechanisms, improves understanding of known failure mechanisms, demonstrates new or innovative analytical techniques, or demonstrates ways to build-in reliability. Specific areas to be addressed during the 2009 IRPS are reliability concerns associated with silicon (integrated circuits, discrete devices, MEMS), non-silicon (bipolar, BiCMOS, LEDs and diode lasers, optical fiber and flat panel displays), and emerging technologies including organic electronics and nanotechnology.

The deadline for abstract submission is October 3 2008.

In the Call for Papers, it is said that IRPS can accept papers which "identify new or improve our understanding of the physics of failure and modeling of mechanisms in electronic and optoelectronic devices, materials, and systems".

Therefore, IRPS is a very attractive conference to present results on modeling of failure mechanisms.




Other opportunities at the symposium include:

  • A 2-day Tutorial Program. Attendees have the opportunity to learn a new area in some technical depth from an industry expert or brush up on the fundamentals with introductory tutorials. There are typically about 20 tutorials that are offered on topics ranging from back-end reliability to gate dielectric and transistor reliability to circuit/product reliability to assembly/ packaging reliability.


  • Reliability Year-In-Review Seminars. These seminars provide a summary of important work published from the previous year in key reliability areas. Industry experts serve as the “tour guide” and save you time by collecting and summarizing this information to bring you up to date in a particular area as efficiently as possible.


  • Evening Session Workshops enhance the synergy of the symposium by affording the attendees an opportunity to meet in informal groups to discuss key reliability physics topics with the guidance of experienced moderators. Some of the workshop topics are directly coupled to the tutorial program to allow more discussion on a particular topic.


  • Equipment Demonstrations held in parallel with tutorials and technical sessions are a unique aspect of this symposium. Manufacturers of state-of-the-art analytical and test and stress equipment are on hand to demonstrate their products and systems to individuals and small groups. Attendees are encouraged to bring samples or questions for onsite analysis and discussion.


  • An Evening Poster Session has become an important part of the IRPS for authors and attendees to discuss recent research and results in a very interactive environment.

EDS Mini-Colloquium on New Frontiers on Compact Modeling

The IEEE Electron Device Society (EDS) organizes Mini-Colloquium (MQ) on New Frontiers on Compact Modeling on October 10 in Santa Clara University, Santa Clara CA, USA.

This MQ is focused on the emerging compact device and interconnect models. Six EDS distinguished lecturers have been invited:

J. J. Liou: "Compact modeling of silicon controlled rectifier for electrostatic discharge (ESD) computer aided design applications"

M. J. Deen: "Noise issues in advanced silicon devices and circuits"

N. Sadachika: "Modeling and characterization of RF/analog and noise using HiSIM2"

B. Yu, Y. Taur, J. Song: "Compact modeling of multiple-gate MOSFETs"

L.F. Register: "Nanoscale MOSFET physics: Observations from non-compact modeling studies"

P.K. Yu: "Wafer bonding for heterogeneous integration"

The Chair person will be Samar Saha, IEEE EDS Compact Modeling Technical Committee Chair, from Silterra USA Inc., San Jose, CA.