Thursday, 22 January 2015

[mos-ak] [Announcement and Call for Papers] Spring 2015 MOS-AK Workshop at DATE

 Spring 2015 MOS-AK Workshop at DATE
  Grenoble March 12, 2015
  Announcement and Call for Papers 
 
 Together with the MOS-AK Workshop Scientific Program Coordinators Larry Nagel and Andrei Vladimirescu, local workshop chairs Patrick Martin, CEA (F) and Benjamin Iniguez, URV (SP) as well as Extended MOS-AK TPC Committee, we have pleasure to invite to the Spring MOS-AK Workshop which will be held in Grenoble (F) at the DATE Conference. The event is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/Spice modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Venue:
ALPEXPO-ALPES Congres
Parc Événementiel de Grenoble
Avenue d'Innsbruck - CS 52408
38034 Grenoble cedex 2; France

Important Dates:
Call for Papers - December 2014
2nd Announcement - January 2015
Final Workshop Program - February. 2015
MOS-AK Workshop - Friday, March 12, 2015
08:30 - 09:00 - On-site Registration 
09:00 - 11:00 - Morning MOS-AK Session
11:00 - 12:00 - CM Standardization Panel
12:00 - 13:00 - Lunch
13:00 - 16:00 - Afternoon MOS-AK Session 

Topics to be covered include the following:
  • Advances in semiconductor technologies and processing
  • Compact Modeling (CM) of the electron devices
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • Open Source TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, CMOS and SOI-based memory cells
  • Microwave, RF device modeling, high voltage device modeling
  • Nanoscale CMOS devices and circuits
  • Technology R&D, DFY, DFT and IC Designs
  • Foundry/Fabless Interface Strategies
Online Abstract Submission:
Authors should submit an abstract using on-line MOS-AK submission form 
(any related inquiries can be sent to wladek@grabinski.ch)
http://www.mos-ak.org/grenoble_2015/abstracts.php

Free online workshop registration:
(any related inquiries can be sent to wladek@grabinski.ch)
http://www.mos-ak.org/grenoble_2015/registration.php

Postworkshop publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special issue of the International Journal of High Speed Electronics and Systems

Extended MOS-AK/GSA Committee

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IEEE Magazine Pays Special Tribute to Professor Yannis Tsividis

  To Electrical Engineering Professor Yannis Tsividis’ long roster of distinguished achievements, add one more: the latest issue of IEEE Solid-State Circuits Magazine is devoted to his remarkable career and strong influence in advancing analog and mixed-signal integrated circuits.

  Tsividis, recently named the Edwin Howard Armstrong Professor of Electrical Engineering at Columbia, created the first fully integrated mixed-signal metal-oxide-semiconductor (MOS) operational amplifier, which became key to pulse-code modulation (PCM) voice codecs for telephony and helped spur the industry toward mixed analog-digital MOS integrated circuits for communications. The work of Tsividis and his students has resulted in multiple patents around the world and extensive applications at the device, circuit, and system levels as well as in enhanced computer simulation.

  Of the honor, Tsividis said, “I was moved by the kind words of my colleagues and former students, and delighted at the opportunity to tell my story.”

Saturday, 10 January 2015

postdoctoral positions in Compact Modeling in Tarragona (Spain)

As Professor in the Universitat Rovira i Virgili (Tarragona, Catalonia, Spain), I am going to apply for two or three postdoctoral position (funded by the Spanish Ministry and the Catalan Government) related to our research projects about Compact Modeling of semiconductor devices: in particular, the European Union -funded "DOMINO" project (of which I am the coordinator, and which targets modeling of organic and oxide TFTs), and our national projects addressing the modeling of GaN HEMTs and nanowire MOSFETs.

The candidate should be a person who holds a PhD as awarded within the five years prior to the date when the period for presentation of application forms closes. If the candidate does not hold a PhD yet, the deadline to be awarded a PhD is the date of publication of the Awarding Resolution  web site.

The candidate should have enough research experience in the field of semiconductor devices, and must have a very good knowledge of the physics of electron devices. The research project to be carried out can be adapted to the candidate's profile. In any case, it will be related to the research projects in which we participate. Our contribution in these projects is the physics and modeling (in particular compact modeling) of the novel devices addressed by our projects: organic and oxide Thin Film Transistors (TFTs), GaN HEMTs, nanowire FETs, multi-gate MOSFETs (FinFETs, DG MOSFETs,...), ...

The postdoc positions, which will be a contract, will have a duration of 2-3 years. The net salary will be around 1900 Euro/months.

The postdoctoral researcher will work in the compact device team, led by Prof Benjamin Iñiguez, belonging to the Nanoelectronics and Photonics Systems Group (NEPHOS) in the Department of Electronic, Electrical and Automatic Control Engineering of the Universitat Rovira i Virgili (URV). This team is a worldwide well recognized pioneering group in the development of compact models for advanced and emerging semiconductor devices. The team has participated in a number of European Union funded projects aout this topic and has led some of them.

Interested applicants should send me their CV by e-mail.
DEADLINE TO RECEIVE APPLICATIONS: January 25 2015

MY E-MAIL ADDRESS IS: benjamin.iniguez@gmail.com

Address:
Benjamin Iñiguez
Nanoelectronics and Photonics Systrems Group (NEPHOS)
Department of Electronic Engineering
Universitat Rovira i Virgili (URV)
Avinguda dels Paisos Catalans 26
43007 Tarragona
SPAIN.

About Tarragona:

Tarragona is located on the Mediterranean, in the heart of the Costa Daurada, in the south of Catalonia, about 100 Km south from Barcelona. Tarragona is well connected to Barcelona by highway, and frequent trains and buses. It has also a direct bus connection with Barcelona Airport. Besides, it has high-speed rail connection with Madrid and Barcelona.

Tarraco (the Roman name for Tarragona) was one of the most important cities in the Roman Empire. F On 30 November 2000, the UNESCO committee officially declared the Roman archaeological complex of Tàrraco a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public. Among the citizens of Tarragona, it has moreover fomented knowledge of, pride in and respect for the city.
Speaking about Tarraco’s climate, the famous Roman poet Virgil wrote: “The climate blends and confuses the seasons singularly, so that all the year seems an eternal spring.” Thanks to its temperate climate, with an average yearly temperature of 23ºC, its clean beaches with fine and gloden sand, and its singular artistic and architectural heritage, Tarragona is one of the most important tourism hubs in EuropeThe city has a population of 120,202 inhabitants